| Naslov
|
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) (Article)
|
| Autori
|
Crupi Giovanni Latino Mariangela Gugliandolo Giovanni Marinkovic Zlatica D  Cai Jialin Bosi Gianni Raffo Antonio Fazio Enza Donato Nicola
|
| Info |
ELECTRONICS, (2023), vol. 12 br. 8, str. -
|
| Projekat
|
Italian Ministry of University and Research (MUR) through the PRIN [2017FL8C9N]; Ministry of Science, Technological Development and Innovations of the Republic of Serbia; GaN4AP (GaN for Advanced Power Applications) project [CUP: B82C21001520008] |
| Ispravka
|
Web of Science
Članak
Elečas
Rang časopisa
|
|
|
