Autori: Duane Russell
Naslov | A Design Concept for Radiation Hardened RADFET Readout System for Space Applications (Article) |
Autori | Andjelkovic Marko Simevski Aleksandar Chen Junchao Schrape Oliver Stamenkovic Zoran Krstic Milos D Ilic Stefan D ![]() ![]() |
Info | MICROPROCESSORS AND MICROSYSTEMS, (2022), vol. 90 br. , str. - |
Projekat | European Union [857558] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Sensitivity and fading of irradiated RADFETs with different gate voltages (Article) |
Autori | Ristic Goran S ![]() ![]() |
Info | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, (2022), vol. 1029 br. , str. - |
Projekat | European UnionEuropean Commission [857558]; Ministry of Education, Science and Technological Development of the Republic of SerbiaMinistry of Education, Science & Technological Development, Serbia [43011] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Recharging process of commercial floating-gate MOS transistor in dosimetry application (Article) |
Autori | Ilic Stefan D ![]() ![]() ![]() |
Info | MICROELECTRONICS RELIABILITY, (2021), vol. 126 br. , str. - |
Projekat | Ministry of Education, Science and Technological Development, Serbia [43011, 451-03-9/2021-14/200026]; European Commission, WIDESPREAD-2018-3-TWINNING, grantEuropean Commi |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Radiation sensitive MOSFETs irradiated with various positive gate biases (Article) |
Autori | Ristic Goran S ![]() ![]() |
Info | JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES, (2021), vol. 14 br. 1, str. 353-357 |
Projekat | European Union's Horizon 2020 research and innovation programme [857558]; Ministry of Education, Science and Technological Development, Serbia [43011] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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Naslov | Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm (Article) |
Autori | Ristic Goran S ![]() |
Info | SENSORS AND MATERIALS, (2021), vol. 33 br. 6, str. 2109-2116 |
Projekat | European Union's Horizon 2020 research and innovation programme [857558]; Ministry of Education, Science and Technological Development, Serbia [43011] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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