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Autori: Jaksic Aleksandar B

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Naslov The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs (Article)
Autori Ristic Goran S  Vasovic Nikola D Jaksic Aleksandar B 
Info JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2012), vol. 45 br. 30, str. -
Projekat Ministry of Education and Science of the Republic of Serbia[III43011]; European Commission[207 122 RADDOS]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature (Article)
Autori Pejovic Milic M  Pejovic Momcilo M Jaksic Aleksandar B 
Info SENSORS AND ACTUATORS A-PHYSICAL, (2012), vol. 174 br. , str. 85-90
Projekat Ministry of Science and Technological Development of the Republic of Serbia[171007]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si) (Article)
Autori Ristic Goran S  Vasovic Nikola D Kovacevic Milojko S  Jaksic Aleksandar B 
Info NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2011), vol. 269 br. 23, str. 2703-2708
Projekat Ministry of Education and Science of the Republic of Serbia[11143011]; European Commission[207 122 RADDOS]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Radiation-sensitive Field Effect Transistor Response to Gamma-ray Irradiation (Article)
Autori Pejovic Milic M  Pejovic Momcilo M Jaksic Aleksandar B 
Info NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2011), vol. 26 br. 1, str. 25-31
Projekat Ministry of Science and Technological Development of the Republic of Serbia [171007]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs (Article)
Autori Aleksic Sanja M  Jaksic Aleksandar B Pejovic Momcilo M 
Info SOLID-STATE ELECTRONICS, (2008), vol. 52 br. 8, str. 1197-1201
Projekat Ministry of the Science of the Republic of Serbia [141008B]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress (Article)
Autori Ristic Goran S  Pejovic Momcilo M Jaksic Aleksandar B 
Info JOURNAL OF NON-CRYSTALLINE SOLIDS, (2007), vol. 353 br. 2, str. 170-179
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing (Article)
Autori Ristic Goran S  Pejovic Momcilo M Jaksic Aleksandar B 
Info APPLIED SURFACE SCIENCE, (2006), vol. 252 br. 8, str. 3023-3032
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Fowler-Nordheim high electric field stress of power VDMOSFETs (Article)
Autori Ristic Goran S  Pejovic Momcilo M Jaksic Aleksandar B 
Info SOLID-STATE ELECTRONICS, (2005), vol. 49 br. 7, str. 1140-1152
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs (Article)
Autori Ristic Goran S  Pejovic Momcilo M Jaksic Aleksandar B 
Info APPLIED SURFACE SCIENCE, (2003), vol. 220 br. 1-4, str. 181-185
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs (Article)
Autori Jaksic Aleksandar B Ristic Goran S  Pejovic Momcilo M Mohammadzadeh A Sudre C Lane W 
Info IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2002), vol. 49 br. 3, str. 1356-1363
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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