Autori: Ristic Goran S
Naslov | Thermal and UV annealing of irradiated pMOS dosimetric transistors (Article) |
Autori | Ristic Goran S ![]() |
Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2009), vol. 42 br. 13, str. - |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|
Naslov | Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays (Article) |
Autori | Jha Shrawan K Jelenkovic Emil V Pejovic Milic M ![]() ![]() |
Info | MICROELECTRONIC ENGINEERING, (2009), vol. 86 br. 1, str. 37-40 |
Projekat | Research Grant Council of Hong Kong [CityU 123607, PolyU 5236/04E]; Ministry of the Science of the Republic of Serbia [141008B] |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|
Naslov | Modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures of 6.6 and 13.3 mbar in the increase region of the memory curve (Article) |
Autori | Nesic Nikola T Ristic Goran S ![]() ![]() |
Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2008), vol. 41 br. 22, str. - |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|
Naslov | Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors (Review) |
Autori | Ristic Goran S ![]() |
Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2008), vol. 41 br. 2, str. - |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|
Naslov | Analysis of neutral active particle loss in afterglow in krypton at 2.6 mbar pressure (Article) |
Autori | Pejovic Momcilo M Karamarkovic Jugoslav P ![]() ![]() ![]() |
Info | PHYSICS OF PLASMAS, (2008), vol. 15 br. 1 , Suppl. , str. - |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|
Naslov | Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress (Article) |
Autori | Ristic Goran S ![]() |
Info | JOURNAL OF NON-CRYSTALLINE SOLIDS, (2007), vol. 353 br. 2, str. 170-179 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|
Naslov | Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing (Article) |
Autori | Ristic Goran S ![]() |
Info | APPLIED SURFACE SCIENCE, (2006), vol. 252 br. 8, str. 3023-3032 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|
Naslov | Fowler-Nordheim high electric field stress of power VDMOSFETs (Article) |
Autori | Ristic Goran S ![]() |
Info | SOLID-STATE ELECTRONICS, (2005), vol. 49 br. 7, str. 1140-1152 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|
Naslov | Gamma and UV radiation effects on breakdown voltage of neon-filled tube (Article) |
Autori | Pejovic Milic M ![]() ![]() |
Info | IEEE TRANSACTIONS ON PLASMA SCIENCE, (2005), vol. 33 br. 3, str. 1047-1052 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|
Naslov | Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs (Article) |
Autori | Ristic Goran S ![]() |
Info | APPLIED SURFACE SCIENCE, (2003), vol. 220 br. 1-4, str. 181-185 |
Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
|